• FRAM (ferroelectric random access memory) is a type of random access memory that combines the quick read and write access of dynamic RAM (DRAM) with non-volatility.
• Ferroelectric RAM, often known as F-RAM or FeRAM, is a type of memory that may compete with Flash in many areas, albeit it has a number of advantages and downsides.
• While the name FRAM, or ferroelectric RAM, suggests that the memory contains an iron element, this is not the case.
• FRAM has been around since the beginning of semiconductor technology. The concept was first proposed in 1952, but it took several years for it to be effectively developed because the technologies needed to accomplish it did not exist at the time.

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